| PART |
Description |
Maker |
| HYE18P32160AC-15 |
Specialty DRAMs - 2Mx16, VFBGA-54; Available 2Q04
|
Infineon
|
| HYB25D256161CE-4.0 HYB25D256161CE-5.0 |
Specialty DRAMs - 250MHz (16Mx16)
Specialty DRAMs - 200MHz (16Mx16)
|
Infineon
|
| HYE25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| AT49BV160-90CI AT49BV161-70CI AT49BV161-90CI AT49B |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|48PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | BGA封装| 45PIN |塑料
|
ATM Electronic, Corp.
|
| MT48LC4M32B2F5-7IT MT48LC4M32B2F5-6 MT48LC4M32B2F5 |
4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90 (8 X 13) MM, PLASTIC, VFBGA-90
|
Micron Technology, Inc.
|
| CYDM256B16-40BVXC CYDM064B16-40BVXC CYDM128B16-40B |
16K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100
4K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100
8K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MT45W512KW16BEGB-708IT |
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 6 X 8 MM, 1 MM HEIGHT 0.75 MM PITCH, GREEN, VFBGA-54
|
SMSC, Corp.
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EDI416S4030A12SI EDI416S4030A10SI EDI416S4030A |
1Mx16 Bits x 4 Banks Synchronous DRAM
|
WEDC[White Electronic Designs Corporation]
|
| HY23V16202T HY23V16202 HY23V16202D HY23V16202F HY2 |
1MX16/2MX8 BIT CMOS MASK ROM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
